Product Summary
The AO4442 is an N-Channel Enhancement Mode Field Effect Transistor. The AO4442 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge and operation with gate voltage from 4.5V to 25V. This device of the AO4442 is suitable for use as a load switch or in PWM applications. Standard Product AO4442 is Pb-free (meets ROHS & Sony 259 specifications). The AO4442 is a Green Product ordering option.
Parametrics
AO4442 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 75 V; (2)Gate-Source Voltage, VGS: ±25 V; (3)Continuous Drain Current, ID: -3.1 A; (4)Pulsed Drain Current, IDM: -20 A; (5)Power Dissipation, PD: 2.5 W; (6)Junction and Storage Temperature Range, TJ: -55 to 150 ℃.
Features
AO4442 features: (1)VDS (V) = 75V; (2)ID = 3.1 A (VGS =10V); (3)RDS(ON) < 130mΩ (VGS = 10V); (4)RDS(ON) < 165mΩ(VGS =4.5V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AO4442 |
MOSFET N-CH 75V 3.1A 8SOIC |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
AO4401 |
Other |
Data Sheet |
Negotiable |
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AO4402 |
MOSFET N-CH 20V 20A 8SOIC |
Data Sheet |
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AO4403 |
MOSFET P-CH -30V -6.1A 8-SOIC |
Data Sheet |
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AO4404 |
Other |
Data Sheet |
Negotiable |
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AO4404B |
MOSFET N-CH 30V 8.5A 8-SOIC |
Data Sheet |
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AO4405 |
Other |
Data Sheet |
Negotiable |
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