Product Summary
The AO4437 is a P-Channel Enhancement Mode Field Effect Transistor. The AO4437 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge and operation with gate voltage as low as1.8V. This device of the AO4437 is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4437 is Pb-free (meets ROHS & Sony 259 specifications). The AO4437 is a Green Product ordering option.
Parametrics
AO4437 absolute maximum ratings: (1)Drain-Source Voltage, VDS: -12 V; (2)Gate-Source Voltage, VGS: ±8 V; (3)Continuous Drain Current, ID: -11 A; (4)Pulsed Drain Current, IDM: -20 A; (5)Power Dissipation, PD: 3 W; (6)Junction and Storage Temperature Range, TJ: -55 to 150 ℃.
Features
AO4437 features: (1)VDS (V) = -12V; (2)ID = -11 A (VGS = -4.5V); (3)RDS(ON) < 16mΩ (VGS = -2.5V); (4)RDS(ON) < 20mΩ(VGS = -2.5V); (5)RDS(ON) < 25mΩ (VGS = -1.8V); (3)ESD Rating: 4KV HBM.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AO4437 |
MOSFET P-CH -12V -11A 8-SOIC |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
AO4401 |
Other |
Data Sheet |
Negotiable |
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AO4402 |
MOSFET N-CH 20V 20A 8SOIC |
Data Sheet |
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AO4403 |
MOSFET P-CH -30V -6.1A 8-SOIC |
Data Sheet |
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AO4404 |
Other |
Data Sheet |
Negotiable |
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AO4404B |
MOSFET N-CH 30V 8.5A 8-SOIC |
Data Sheet |
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AO4405 |
Other |
Data Sheet |
Negotiable |
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