Product Summary

The AO4431 is a P-Channel Enhancement Mode Field Effect Transistor. The AO4431 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device of the AO4431 is suitable for use as a load switch or in PWM applications. Standard Product AO4431 is Pb-free (meets ROHS & Sony 259 specifications). The AO4431 is a Green Product ordering option.

Parametrics

AO4431 absolute maximum ratings: (1)Drain-Source Voltage, VDS: -30 V; (2)Gate-Source Voltage, VGS: ±25 V; (3)Continuous Drain Current, ID: -12 A; (4)Pulsed Drain Current, IDM: -60 A; (5)Power Dissipation, PD: 3 W; (6)Junction and Storage Temperature Range, TJ: -55 to 150 ℃.

Features

AO4431 features: (1)VDS (V) = -30V; (2)ID = -12 A (VGS = -20V); (3)RDS(ON) ＜ 13mΩ (VGS = -20V); (4)RDS(ON) ＜ 14mΩ(VGS = -10V).

Diagrams

AO4431 block diagram