Product Summary

The AO4430 is an N-channel enhancement mode field effect transistor. The AO4430 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion.

Parametrics

AO4430 absolute maximum ratings: (1)Drain-Source Voltage: 30V; (2)Gate-Source Voltage: +/-20V; (3)Continuous Drain Current: 18 or 15 A; (4)Pulsed Drain Current: 80 A; (5)Power Dissipation: 3 W; (6)Junction and Storage Temperature Range: -55 to 150 ℃; (7)Avalanche Current: 30 A .

Features

AO4430 features: (1)VDS (V) = 30V; (2)ID = 18A (VGS = 10V); (3)RDS(ON) < 5.5mΩ (VGS = 10V); (4)RDS(ON) < 7.5mΩ (VGS = 4.5V).

Diagrams

AO4430 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4430
AO4430

MOSFET N-CH 30V 18A 8-SOIC
Data Sheet
0-1: $0.64
1-25: $0.49
25-100: $0.43
100-250: $0.37
250-500: $0.32
500-1000: $0.25
AO4430L
AO4430L
Other

Data Sheet
Negotiable