Product Summary

The AO4429 is a P-channel enhancement mode field effect transistor. The AO4429 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4429 is Pb-free (meets ROHS & Sony 259 specifications).

Parametrics

AO4429 absolute maximum ratings: (1)Drain-Source Voltage: -30V; (2)Gate-Source Voltage: +/-20V; (3)Continuous Drain Current: -12.8 or -15 A; (4)Pulsed Drain Current: -80 A; (5)Power Dissipation: 3.1 W; (6)Junction and Storage Temperature Range: -55 to 150 ℃.

Features

AO4429 features: (1)VDS (V) = -30V; (2)ID = -15 A (VGS = -10V); (3)Max RDS(ON) < 7.7mΩ (VGS = -10V); (4)Max RDS(ON) < 12mΩ (VGS = -4.5V); (5)ESD Rating: 4KV HBM.

Diagrams

AO4429 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4429
AO4429
Other

Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4401
AO4401
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Data Sheet
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AO4402

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Data Sheet
0-3000: $0.23
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MOSFET P-CH -30V -6.1A 8-SOIC
Data Sheet
0-1: $0.39
1-25: $0.27
25-100: $0.23
100-250: $0.20
250-500: $0.17
500-1000: $0.13
AO4404
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Data Sheet
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AO4404B
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MOSFET N-CH 30V 8.5A 8-SOIC
Data Sheet
0-1: $0.32
1-25: $0.23
25-100: $0.20
100-250: $0.17
250-500: $0.15
500-1000: $0.11
AO4405
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Data Sheet
Negotiable