Product Summary

The AO4427 is a P-channel enhancement mode field effect transistor. The AO4427 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4427 is Pb-free (meets ROHS & Sony 259 specifications).

Parametrics

AO4427 absolute maximum ratings: (1)Drain-Source Voltage: -30V; (2)Gate-Source Voltage: +/-25V; (3)Continuous Drain Current: -12.5 or -10.5 A; (4)Pulsed Drain Current: -60 A; (5)Power Dissipation: 3.0 W; (6)Junction and Storage Temperature Range: -55 to 150 ℃.

Features

AO4427 features: (1)VDS (V) = -30V; (2)ID = -12.5 A (VGS = -20V); (3)RDS(ON) < 12mΩ (VGS = -20V); (4)RDS(ON) < 14mΩ (VGS = -10V); (5)ESD Rating: 2KV HBM.

Diagrams

AO4427 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4427
AO4427

MOSFET P-CH -30V -12.5A 8-SOIC
Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4401
AO4401
Other

Data Sheet
Negotiable 
AO4402
AO4402

MOSFET N-CH 20V 20A 8SOIC
Data Sheet
0-3000: $0.23
AO4403
AO4403

MOSFET P-CH -30V -6.1A 8-SOIC
Data Sheet
0-1: $0.39
1-25: $0.27
25-100: $0.23
100-250: $0.20
250-500: $0.17
500-1000: $0.13
AO4404
AO4404
Other

Data Sheet
Negotiable 
AO4404B
AO4404B

MOSFET N-CH 30V 8.5A 8-SOIC
Data Sheet
0-1: $0.32
1-25: $0.23
25-100: $0.20
100-250: $0.17
250-500: $0.15
500-1000: $0.11
AO4405
AO4405
Other

Data Sheet
Negotiable