Product Summary
The AO4427 is a P-channel enhancement mode field effect transistor. The AO4427 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4427 is Pb-free (meets ROHS & Sony 259 specifications).
Parametrics
AO4427 absolute maximum ratings: (1)Drain-Source Voltage: -30V; (2)Gate-Source Voltage: +/-25V; (3)Continuous Drain Current: -12.5 or -10.5 A; (4)Pulsed Drain Current: -60 A; (5)Power Dissipation: 3.0 W; (6)Junction and Storage Temperature Range: -55 to 150 ℃.
Features
AO4427 features: (1)VDS (V) = -30V; (2)ID = -12.5 A (VGS = -20V); (3)RDS(ON) < 12mΩ (VGS = -20V); (4)RDS(ON) < 14mΩ (VGS = -10V); (5)ESD Rating: 2KV HBM.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AO4427 |
MOSFET P-CH -30V -12.5A 8-SOIC |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
AO4401 |
Other |
Data Sheet |
Negotiable |
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AO4402 |
MOSFET N-CH 20V 20A 8SOIC |
Data Sheet |
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AO4403 |
MOSFET P-CH -30V -6.1A 8-SOIC |
Data Sheet |
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AO4404 |
Other |
Data Sheet |
Negotiable |
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AO4404B |
MOSFET N-CH 30V 8.5A 8-SOIC |
Data Sheet |
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AO4405 |
Other |
Data Sheet |
Negotiable |
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