Product Summary
The AO4423 is a P-channel enhancement mode field effect transistor. The AO4423 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected.
Parametrics
AO4423 absolute maximum ratings: (1)Drain-Source Voltage: -30V; (2)Gate-Source Voltage: +/-25V; (3)Continuous Drain Current: -15 or -12.1 A; (4)Pulsed Drain Current: -80 A; (5)Power Dissipation: 3.1 W; (6)Junction and Storage Temperature Range: -55 to 150 ℃.
Features
AO4423 features: (1)VDS (V) = -30V; (2)ID = -15A; (3)RDS(ON) < 7mΩ (VGS = -20V); (4)RDS(ON) < 8.5mΩ (VGS = -10V); (5)ESD Rating: 6000V HBM.
Diagrams
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![]() AO4423 |
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![]() MOSFET P CH 30V 17A SOIC 8 |
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![]() AO4401 |
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![]() AO4402 |
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![]() MOSFET N-CH 20V 20A 8SOIC |
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![]() AO4403 |
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![]() MOSFET P-CH -30V -6.1A 8-SOIC |
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![]() AO4404 |
![]() Other |
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![]() Negotiable |
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![]() AO4404B |
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![]() MOSFET N-CH 30V 8.5A 8-SOIC |
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![]() AO4405 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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