Product Summary
The AO4420 is an N-channel enhancement mode field effect transistor. The AO4420 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. AO4420 is offered in a lead-free package.
Parametrics
AO4420 absolute maximum ratings: (1)Drain-Source Voltage: 30V; (2)Gate-Source Voltage: +/-12V; (3)Continuous Drain Current: 13.7 or 9.7 A; (4)Pulsed Drain Current: 60 A; (5)Power Dissipation: 3.1 W; (6)Junction and Storage Temperature Range: -55 to 150 ℃.
Features
AO4420 features: (1)VDS (V) = 30V; (2)ID = 13.7A; (3)RDS(ON) < 10.5mΩ¸ (VGS = 10V); (4)RDS(ON) < 12mΩ¸ (VGS = 4.5V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
AO4420 |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||||||
AO4420A |
MOSFET N CH 30V 13.7A SOIC 8 |
Data Sheet |
|
|
||||||||||||||||||
AO4420L |
Other |
Data Sheet |
Negotiable |
|