Product Summary
The AO4411 is a P-channel enhancement mode field effect transistor. The AO4411 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4411 is Pb-free (meets ROHS & Sony 259 specifications).
Parametrics
AO4411 absolute maximum ratings: (1)Drain-Source Voltage: -30V; (2)Gate-Source Voltage: +/-20V; (3)Continuous Drain Current: -8 or -6.6 A; (4)Pulsed Drain Current: -40 A; (5)Power Dissipation: 3.0 W; (6)Junction and Storage Temperature Range: -55 to 150 ℃.
Features
AO4411 features: (1)VDS (V) = -30V; (2)ID = -8 A (VGS = -10V); (3)RDS(ON) < 32mΩ¸ (VGS = -10V); (4)RDS(ON) < 55mΩ¸ (VGS = -4.5V).
Diagrams
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![]() AO4411 |
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![]() MOSFET P CH 30V 8A SOIC 8 |
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![]() AO4401 |
![]() Other |
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![]() Negotiable |
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![]() AO4402 |
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![]() MOSFET N-CH 20V 20A 8SOIC |
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![]() AO4403 |
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![]() MOSFET P-CH -30V -6.1A 8-SOIC |
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![]() AO4404 |
![]() Other |
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![]() Negotiable |
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![]() AO4404B |
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![]() MOSFET N-CH 30V 8.5A 8-SOIC |
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![]() AO4405 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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