Product Summary
The AO4407 is a P-Channel Enhancement Mode Field Effect Transistor. The AO4407 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device of the AO4407 is suitable for use as a load switch or in PWM applications. Standard Product AO4407 is Pb-free (meets ROHS & Sony 259 specifications). The AO4407 is a Green Product ordering option.
Parametrics
AO4407 absolute maximum ratings: (1)Drain-Source Voltage, VDS: -30 V; (2)Gate-Source Voltage, VGS: ±25 V; (3)Continuous Drain Current, ID: -12 A; (4)Pulsed Drain Current, IDM: -60 A; (5)Power Dissipation, PD: 3 W; (6)Junction and Storage Temperature Range, TJ: -55 to 150 ℃.
Features
AO4407 features: (1)VDS (V) = -30V; (2)ID = -12 A (VGS = -20V); (3)RDS(ON) < 13mΩ (VGS = -20V); (4)RDS(ON) < 14mΩ(VGS = -10V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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AO4407 |
Other |
Data Sheet |
Negotiable |
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AO4407A |
MOSFET P-CH -30V -12A 8-SOIC |
Data Sheet |
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