Product Summary

The AO4406 is an N-channel enhancement mode field effect transistor. The AO4406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion.

Parametrics

AO4406 absolute maximum ratings: (1)Drain-Source Voltage: 30V; (2)Gate-Source Voltage: +/-12V; (3)Continuous Drain Current: 11.5 or 9.6 A; (4)Pulsed Drain Current: 80 A; (5)Power Dissipation: 3.0 W; (6)Junction and Storage Temperature Range: -55 to 150 ℃; (7)Avalanche Current: 25 A.

Features

AO4406 features: (1)VDS (V) = 30V; (2)ID = 11.5A; (3)RDS(ON) < 14mΩ&cedil; (VGS = 10V); (4)RDS(ON) < 16.5mΩ&cedil; (VGS = 4.5V); (5)RDS(ON) < 26mΩ&cedil; (VGS = 2.5V).

Diagrams

AO4406 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4406
AO4406

MOSFET N-CH 30V 11.5A 8-SOIC
Data Sheet
Negotiable 
AO4406AL
AO4406AL
Other

Data Sheet
Negotiable