Product Summary

The AO4405 is a P-channel enhancement mode field effect transistor. The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

Parametrics

AO4405 absolute maximum ratings: (1)Drain-Source Voltage: -30V; (2)Gate-Source Voltage: +/-20V; (3)Continuous Drain Current: -6.0 or -5.1 A; (4)Pulsed Drain Current: -30 A; (5)Power Dissipation: 3.0 W; (6)Junction and Storage Temperature Range: -55 to 150 ℃.

Features

AO4405 features: (1)VDS (V) = -30V; (2)ID = -6.0A; (3)RDS(ON) < 50mΩ&cedil; (VGS = -10V); (4)RDS(ON) < 85mΩ&cedil; (VGS = -4.5V).

Diagrams

AO4405 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4405
AO4405
Other

Data Sheet
Negotiable 
AO4405L
AO4405L
Other

Data Sheet
Negotiable