Product Summary
The AO4404 is an N-channel enhancement mode field effect transistor. The AO4404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Parametrics
AO4404 absolute maximum ratings: (1)Drain-Source Voltage: 30V; (2)Gate-Source Voltage: +/-12V; (3)Continuous Drain Current: 8.5 or 7.1 A; (4)Pulsed Drain Current: 60 A; (5)Power Dissipation: 3.0 W; (6)Junction and Storage Temperature Range: -55 to 150 ℃.
Features
AO4404 features: (1)VDS (V) = 30V; (2)ID = 8.5A; (3)RDS(ON) < 24mΩ¸ (VGS = 10V); (4)RDS(ON) < 30mΩ¸ (VGS = 4.5V); (5)RDS(ON) < 48mΩ¸ (VGS = 2.5V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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AO4404 |
Other |
Data Sheet |
Negotiable |
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AO4404B |
MOSFET N-CH 30V 8.5A 8-SOIC |
Data Sheet |
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