Product Summary

The 2SA503X is an epitaxial silicon pnp.

Parametrics

2SA503X absolute maximum ratings: (1)Collector-Base Voltage: 60 V; (2)Collector-Emitter Voltage: -50 V; (3)Emitter-Base Voltage: -5 V; (4)Collector Current: -600 mA; (5)Emitter Current: 600 mA; (6)Total Device Dissipation: 800 mW; (7)Operating Junction and Storage: 175 ℃; (8)Temperature Range: -65 to 175 ℃.

Features

2SA503X features: (1)ICRO: -0.5 μA; (2)IEBO: -1 μA; (3)IRFE: 30 to 300 μA; (4)VCE: -0.2 to -0.5 V; (5)VBE: -0.8 to -1.5 V; (6)FT: 50 to 130 MHZ; (7)COB: 18 to 30 PF; (8)RBB: 10 to 30 Ω; (9)ION: 25 ns.

Diagrams

2SA503X block diagram