Product Summary

The 2N5781 is a silicon epitaxial pnp transistor. The 2N5781 is intended for medium-power switching and complementary-symmetry audio amplifier applications.

Parametrics

2N5781 absolute maximum ratings: (1)VCBO, Collector–Base Voltage: -80V; (2)VCER(BR), Collector–Emitter Breakdown Voltage RBE = 100Ω: -80V; (3)VCEO(BR), Collector–Emitter Breakdown Voltage: -65V; (4)VEBO, Emitter – Base Voltage: -5V; (5)IC, Continuous Collector Current: -3.5A; (6)IB, Continuous Base Current: -1A; (7)PT, Total Device Dissipation: 10W; (8)TJ, TSTG Operating Junction and Storage Temperature Range: –65 to +200℃.

Features

2N5781 features: (1)Low saturation voltages; (2)Maximum Safe area of operation curves; (3)High gain at high current; (4)High breakdown voltages.

Diagrams

2N5781 block diagram