(Hong Kong)
Product Summary
The 2N5240 is a multi epitaxial silicon n-p-n power transistor. The application of the 2N5240 includes Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers.
Parametrics
2N5240 absolute maximum ratings: (1)VCBO: 375 V; (2)VCER(SUS): 350 V; (3)VCEO(SUS): 300 V; (4)VEBO: 6 V; (5)IC: 5 A; (6)IB: 2 A; (7)PC: 100 W; (8)TJ: 200 ℃; (9)Tstg: -65 to 200 ℃.
Features
2N5240 features: (1)High Voltage: VCEO(SUS)= 300V(Min); (2)Wide Area of Safe Operation
Diagrams
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 2N5240 |
Other |
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Data Sheet |
Negotiable |
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2N5202 |
Other |
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Data Sheet |
Negotiable |
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2N5210_D26Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
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2N5210_D75Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
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2N5210_D81Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Transistor General Purpose |
Data Sheet |
Negotiable |
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2N5210_S00Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Transistor General Purpose |
Data Sheet |
Negotiable |
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2N5226 |
Central Semiconductor |
Transistors Bipolar (BJT) PNP Gen Pur SS |
Data Sheet |
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