(Hong Kong)
Product Summary
The 2N4858 is an N-CHANNEL J-FET.
Parametrics
2N4858 absolute maximum ratings: (1)Gate-Source Voltage, VGS: -40 V; (2)Drain-Source Voltage, VDS: 40 V; (3)Drain-Gate Voltage, VDG: 40 V; (4)Gate Current, IG: 50 mA; (5)Power Dissipation, TA = +250℃, TC = +250℃, PT: 0.36 W; (6)Operating Junction & Storage Temperature Range, Tj, Tstg: -65 to +200 ℃.
Features
2N4858 features: (1)Gate-Source Breakdown Voltage, V(BR)GSS: -40 Vdc; (2)Gate-Source “Off” State Voltage, VGS(on): -0.4 to -10 Vdc; (3)Gate Reverse Current, IGSS: -0.25 μA; (4)Drain Current, ID(off): 0.25 μA.
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 2N4858A |
Central Semiconductor |
JFET Leaded JFET General Purpose |
Data Sheet |
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2N4858A-E3 |
Vishay/Siliconix |
JFET 40V 5pA |
Data Sheet |
Negotiable |
|
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2N4858JANTXV |
Other |
|
Data Sheet |
Negotiable |
|
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2N4858JANTX |
Other |
|
Data Sheet |
Negotiable |
|
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2N4858JAN |
Other |
|
Data Sheet |
Negotiable |
|
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2N4858 |
Other |
|
Data Sheet |
Negotiable |
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