Product Summary

The 2N3055 is a POWER TRANSISTOR. The 2N3055 designed for use in general-purpose amplifier and switching applications.

Parametrics

2N3055 absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 60 V; (2)Collector-Emitter Voltage, VCER: 70 V; (3)Collector-Base Voltage, VCBO: 100 V; (4)Emitter-Base Voltage, VEBO: 7.0 V; (5)Collector Current-Continuous, IC: 15 A; (6)Base Current, IB: 7.0 A; (7)Total Power Dissipation @TC = 25 ℃, PD: 115 W; (8)Operating and Storage Junction Temperature Range, TJ: -65 to 200℃.

Features

2N3055 features: (1)Power Dissipation-PD = 115 W @ TC = 25 ℃; (2)DC Current Gain hFE = 20 ～ 70 @ IC = 4.0 A; (3)VCE = 1.1 V @ IC = 4.0 A, IB = 400 mA.

Diagrams

2N3055 block diagram 

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2N3055AG
2N3055AG
ON Semiconductor
Transistors Bipolar (BJT) 15A 60V 115W NPN
Data Sheet
0-1: $1.54
1-25: $1.24
25-100: $1.10
100-500: $0.96
2N3055HG
2N3055HG
ON Semiconductor
Transistors Bipolar (BJT) 15A 60V 115W NPN
Data Sheet
Negotiable 
2N3055H
2N3055H
ON Semiconductor
Transistors Bipolar (BJT) 15A 60V 115W NPN
Data Sheet
Negotiable 
2N3055G
2N3055G
ON Semiconductor
Transistors Bipolar (BJT) NPN 15A 60V
Data Sheet
0-1: $1.38
1-25: $1.33
25-100: $1.02
100-500: $0.79
2N3055A
2N3055A
ON Semiconductor
Transistors Bipolar (BJT) 15A 60V 115W NPN
Data Sheet
Negotiable 
2N3055
2N3055
STMicroelectronics
Transistors Bipolar (BJT) NPN Power Switching
Data Sheet
0-1: $1.08
1-10: $0.88
10-100: $0.74
100-250: $0.68
2N3055E
2N3055E
Other

Data Sheet
Negotiable 
2N3055_MJ2955
2N3055_MJ2955
Other

Data Sheet
Negotiable